| PART |
Description |
Maker |
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| V23809-C8-C10 INFINEONTECHNOLOGIESAG-V23809-C8-C10 |
Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 170 MBd 1x9 Transceiver
MM 170 MBd FE/FDDI/ATM Transceiver
|
Infineon Technologies AG
|
| KAD2708C11 KAD2708C-10 KAD2708C-17 KAD2708C-27Q68 |
8-Bit, 170MSPS Single-Channel ADC, LVCMOS Outputs
8-Bit, 105MSPS Single-Channel ADC, LVCMOS Outputs
8-Bit, 275/210/170/105MSPS A/D Converter
8-Bit, 275/210/170/105MSPS A/D Converter
|
Intersil Corporation
|
| EFG14G EFG15E |
3 PHASE, 170 A, 1400 V, SILICON, RECTIFIER DIODE
3 PHASE, 170 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
CRYDOM CORP
|
| BSS119 Q67000-S007 Q67000-S063 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
SIPMOS ? Small-Signal Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| M5RJ18EPJ M5RJ18EPJ-R M5RJ18EQJ M5RJ18EQJ-R M5RJ65 |
CRYSTAL OSCILLATOR, CLOCK, 19.44 MHz - 170 MHz, PECL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 170 MHz - 250 MHz, PECL OUTPUT
9x14 mm, 3.3 Volt, LVPECL/LVDS, Clock Oscillator
|
MTRONPTI
|
